MICROWAVE AMPLIFIER Russian patent published in 1994 - IPC

FIELD: microwave radio electronics. SUBSTANCE: amplifier having field-effect transistor whose drain, gate, and source are connected to first, second, and third strips arranged on face side of metallized dielectric substrate, first and second half-wave stubs of drain and gate supply circuits opened at their ends is provided in addition with first, second, third, fourth, fifth, sixth, and seventh resistive components and third, fourth, fifths, sixth, and seventh half-wave stubs. First and second resistive components are cut in breaks made in first strip on either side of first half-wave stub and in parallel to them are connected through their leads third and fourth half-wave stubs, respectively; third and fourth resistive components are cut in series with second strip on either side of second half-wave stub and in parallel to them are connected leads of fifth and sixth half-wave stubs, respectively; seventh half-wave stub is connected through its leads in parallel to fifth resistive component cut in series with third strip; sixth and seventh resistive components are connected to center tap of first and second half-wave stubs. EFFECT: improved stability. 1 dwg