MICROWAVE TRANSISTOR OSCILLATOR Russian patent published in 2004 - IPC

FIELD: microwave engineering; microwave transceivers, medical instruments, and radar transducers.

SUBSTANCE: proposed microwave oscillator designed for operation in extremely high frequency band at output frequencies up to 100 GHz and output oscillation frequencies ranging between 20 and 120 GHz has field-effect transistor whose source, gate, and drain are connected, respectively, to first, second, and third conducting surfaces disposed on insulating substrate placed in center of waveguide wide walls. Newly introduced in oscillator are two lumped capacitive elements, lumped inductive element, two resistive surfaces, and short-circuited length of regular waveguide. Slots between conducting surfaces form waveguide slotted lines whose lengths function as resonant and matching circuits. Opposing ends of conducting surfaces as well as those of two resistive surfaces form mentioned resonant circuit with transistor gate and drain leads connected thereto. First and second capacitive elements interconnected through inductive element to form series CLC circuit are disposed at distance of λ/4 from connection points of transistor gate and drain along mentioned slot, where λ is wavelength of oscillation frequency 2f₁ at oscillator output.

EFFECT: reduced cost, enhanced output oscillation frequency and effectiveness.

8 cl, 9 dwg