INTEGRATED DEVICE OF SUPERHIGH-FREQUENCY BAND Russian patent published in 2001 - IPC

FIELD: electrical communications engineering. SUBSTANCE: device intended for use in receivers of radar stations, radio navigation facilities, satellite communication systems to amplify superhigh- and ultrahigh-frequency electromagnetic waves is built around solid-state microwave amplifier using microstrip technology and has multistage solid-state hybrid monolithic amplifier built around field-effect transistors, directional couplers, isolating capacitors, and loading resistors. Newly introduced in device are first through sixth inductance coils, fixed capacitors, trimming resistors, and n-stage protective gear using parallel-connected limiting p-i-n diodes, microstrip connectors, and capacitors. Protective gear of device ensures protection against heavy-power input signals. EFFECT: enhanced gain, reduced noise factor and gain variation throughout operating frequency range, reduced power requirement and maintenance charges. 2 cl, 2 dwg