METHOD OF HIGH-PURE SILICON PREPARING Russian patent published in 1995 - IPC

FIELD: nonferrous metallurgy. SUBSTANCE: metallurgic silicon is treated with alkali and mineral acids and then converted to the silicon carbide by its high-temperature interaction with carbon. Silicon carbide prepared is treated successively with hydrochloric and hydrofluoric acids at boiling points of latters following by their interaction with stoichiometric concentration of high-pure silica up to the preparing of elemental silicon at 1900-2100 C. EFFECT: improved method of silicon preparing. 1 cl, 1 tbl