FIELD: semiconductor electronics. SUBSTANCE: method involves preparation of aluminium metaphosphate powder base diffusant by adding to it 30 to 50 mass percent of zirconium pyrophosphate powder, its exposure to 1040-1120 C for 20-120 minutes, and cooling down to room temperature, applying diffusant onto heat-resistant backing in layer of 0.4-0.8 mcm in thickness followed by its annealing at 1080-1170 C for 15-20 minutes. EFFECT: increased working temperature (up to 1100 C), improved service life of source (up to 30 h). 1 tbl
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