FIELD: electronic equipment. SUBSTANCE: process of diffusion of phosphorus from solid source is designed to increase output of good semiconductor devices with highly doped diffusion regions of n type thanks to avoidance of contamination of structures formed on silicon plates with metal impurities which is achieved by use of powder of silicon pyrophosphate with dispersion 0.5-100.0 μ as solid source. EFFECT: increased output of semiconductor devices. 2 tbl
Authors
Dates
1995-05-10—Published
1991-06-28—Filed