PROCESS OF MANUFACTURE OF SOLID PLANAR SOURCES OF PHOSPHORUS DIFFUSION BASED ON SILICON PYROPHOSPHATE Russian patent published in 1995 - IPC

FIELD: manufacture of semiconductor devices. SUBSTANCE: intermediate mixture of powders of silicon microphosphate 70-90 parts by mass, silicon 10-30 parts by mass is prepared before application of diffusant on to thermally stable substrate, intermediate mixture is fired in inert atmosphere at 1000-1050 C for the course of 20-50 min and ground. Powder of zirconium pyrophosphate is injected into mixture with addition of ammonium dihydrophosphate. Diffusant ingredients are taken in following proportion, parts by mass: intermediate mixture after firing 70-92, zirconium pyrophosphate 5-20, ammonium dihydrophosphate 3-10. EFFECT: increased output of good sources, prolonged operational life of sources. 3 tbl