FIELD: electron-ray lithography and microelectronics. SUBSTANCE: composition has 8-15 wt.-% polymethylmethacrylate with molecular mass 125000-439000 and molecular-mass distribution 1.5-1.85 prepared in the presence of 0.5-1.5 wt.-% organohydride oligosilane in diethylene glycol dimethyl ester. Solution is applied on the plate made of gallium arsenide or silicon oxide and dried. Resist film prepared has thickness 0.3-0.5 mcm. EFFECT: enhanced quality of composition. 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| PHOTORESISTIVE COMPOSITION OF A HIGHLY SENSITIVE POSITIVE ELECTRON RESIST | 2019 |
|
RU2692678C1 |
| PHOTOPOLYMERIZING COMPOSITION FOR PREPARING OF MATRIX PROTECTIVE RELIEF FOR GALVANOPLASTIC ACCUMULATING | 1988 |
|
SU1632228A1 |
