PHOTORESISTIVE COMPOSITION OF A HIGHLY SENSITIVE POSITIVE ELECTRON RESIST Russian patent published in 2019 - IPC G03F7/39 C08F220/06 C08F220/12 C08F220/18 

Abstract RU 2692678 C1

FIELD: technological processes.

SUBSTANCE: invention relates to photoresist compositions and can be used in electron-beam lithography, in X-ray lithography in production of integrated circuits with submicron dimensions of elements. Photoresistive composition of the high-sensitivity positive electronic resistor contains a polymethylmethacrylate polymer and a solvent; the polymethylmethacrylate polymer has a molecular weight of 200,000–500,000. Polymer and solvent are taken in ratio, wt%: polymethyl methacrylate polymer – 5–15, solvent – the rest, wherein polymethylmethacrylate polymer is obtained by polymerisation of methyl methacrylate, methacrylic acid and butylacrylate, which are taken in the following ratio, wt%: methyl methacrylate – 70–90, methacrylic acid – 5–15, butylacrylate – from 5–15.

EFFECT: high sensitivity of the electronic device.

1 cl, 1 tbl

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RU 2 692 678 C1

Authors

Kolmogorov Iurii Nikolaevich

Dzhons Mikhail Mikhailovich

Dates

2019-06-26Published

2019-01-30Filed