FIELD: technological processes.
SUBSTANCE: invention relates to photoresist compositions and can be used in electron-beam lithography, in X-ray lithography in production of integrated circuits with submicron dimensions of elements. Photoresistive composition of the high-sensitivity positive electronic resistor contains a polymethylmethacrylate polymer and a solvent; the polymethylmethacrylate polymer has a molecular weight of 200,000–500,000. Polymer and solvent are taken in ratio, wt%: polymethyl methacrylate polymer – 5–15, solvent – the rest, wherein polymethylmethacrylate polymer is obtained by polymerisation of methyl methacrylate, methacrylic acid and butylacrylate, which are taken in the following ratio, wt%: methyl methacrylate – 70–90, methacrylic acid – 5–15, butylacrylate – from 5–15.
EFFECT: high sensitivity of the electronic device.
1 cl, 1 tbl
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Authors
Dates
2019-06-26—Published
2019-01-30—Filed