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2 050 318

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Application

5021668/26, 1991-10-04

(22)

Actual filing date

1991-10-04

(45)

Published

1995-12-20

(72)

Inventor

Grinberg E.E.Khangazheev S.Kh.Nozdrja S.M.Efremov A.A.Belolipetskij V.P.Mirskov R.G.Voronkov M.G.Kuntsevich A.D.

(73)

Holder

Vsesojuznyj Nauchno-Issledovatel'Skij Institut Khimicheskikh Reaktivov I Osobo Chistykh Khimicheskikh Veshchestv

METHOD OF PRODUCING ARSENIC OF HIGH PURITY Russian patent published in 1995 - IPC

Abstract RU 2050318 C1

FIELD: inorganic chemistry. SUBSTANCE: method involves interaction of arsenic trihalide with silicon-elementorganic compound (hydrodisiloxanes) in liquid phase at 10-70 C followed by isolation and sublimation of solid reaction product under vacuum. Prepared arsenic of high purity satisfies requirements for parental materials used in electronic engineering. Impurity content before sublimation is 10-4-10-5% and after sublimation is 10-6-10-7%, yield is up to 95% (as As). EFFECT: improved method of arsenic producing. 3 cl, 1 tbl

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RU 2 050 318 C1

Authors

Grinberg E.E.

Khangazheev S.Kh.

Nozdrja S.M.

Efremov A.A.

Belolipetskij V.P.

Mirskov R.G.

Voronkov M.G.

Kuntsevich A.D.

Dates

1995-12-20—Published

1991-10-04—Filed

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