FIELD: crystallography. SUBSTANCE: device for growing of single-crystal of refractory substances has crystal growing chamber accommodating rod heater in which number of lower rods is higher than that of the upper rods; multilayer horizontal and end face shields encircling the rod heater and forming corridors at the heater inlet and outlet to provide space for moving containers. Installed in corridor at the heater outlet is additional shield made in form of rods adjacent to one another. Heater consists of upper and lower sections connected successively with the aid of removable connector. Rods of lower sections under container are bent at the angle whose vertex is directed towards the container. Additional shield rods are bent towards heater to form end face shield and installed for movement along the container axis. Multilayer shields are installed in crystal growing chamber through insulators. External layer of horizontal shields and the end face shield located at the heater inlet are made in form of plates from refractory ceramics or boxes of refracting metal with ceramic filling. Removable connector may be made in form of plate pack of thin-sheet refractory metal having two holes for ends of heater sections and tightened by center between them. EFFECT: higher efficiency. 2 cl, 2 dwg
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Authors
Dates
1996-06-10—Published
1991-09-25—Filed