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2 038 356

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Application

93003380/26, 1993-01-19

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Actual filing date

1993-01-19

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Published

1995-06-27

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Inventor

Sobolev B.P.Stanishevskij Eh.Ja.Semenkov Ju.V.Kisel'Kov M.P.Zubova E.N.Zhmurova Z.I.Krivandina E.A.

(73)

Holder

Institut Kristallografii Im.A.V.Shubnikova Ran

DEVICE FOR CRYSTAL GROWING IN FURNACE WITH TWO-ZONE ELECTRIC HEATING Russian patent published in 1995 - IPC

Abstract RU 2038356 C1

FIELD: crystal growing. SUBSTANCE: device for crystal growing in furnace with two-zone electric heating has sectional body, furnace consisting of two successively arranged sectional heat units with diaphragm between them and rod moving along furnace axis. Diaphragm is connected with body chamber walls and provided with system of inner channels and outer replaceable inserts of heat-resistant material. Regulation of temperature gradient at boundary of heating zone and extended range of grown crystals with high quality are ensured due to selection of respective diaphragm. EFFECT: higher efficiency. 2 dwg

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RU 2 038 356 C1

Authors

Sobolev B.P.

Stanishevskij Eh.Ja.

Semenkov Ju.V.

Kisel'Kov M.P.

Zubova E.N.

Zhmurova Z.I.

Krivandina E.A.

Dates

1995-06-27—Published

1993-01-19—Filed

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