PROCESS OF MANUFACTURE OF OXIDE-SEMICONDUCTOR CAPACITOR Russian patent published in 1996 - IPC

Abstract RU 2061976 C1

FIELD: electronics, radio engineering. SUBSTANCE: anodizing and thermal treatment of volumetric-porous anodes is conducted for the course of 0.75-2.0 h in the air. Thermal treatment of niobium anodes is performed at temperature 30-450 C and of tantalum anodes - at 400-525 C. Then anodizing is conducted at voltage equal to 0.35-0.61 voltage of anodizing. After this semiconductor cathode is deposited by pyrolytic decomposition of manganese, additional re-anodizing and deposition of transit coats are conducted. Specified sequence of operations and technological modes make it possible to increase capacitance of oxide-semiconductor capacitor. EFFECT: increased capacitance of oxide-semiconductor capacitors. 2 dwg

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RU 2 061 976 C1

Authors

Kosjuk L.M.

Beder L.K.

Khanina E.Ja.

Ershova N.Ju.

Dates

1996-06-10Published

1992-09-04Filed