FIELD: electronics, radio engineering. SUBSTANCE: anodizing and thermal treatment of volumetric-porous anodes is conducted for the course of 0.75-2.0 h in the air. Thermal treatment of niobium anodes is performed at temperature 30-450 C and of tantalum anodes - at 400-525 C. Then anodizing is conducted at voltage equal to 0.35-0.61 voltage of anodizing. After this semiconductor cathode is deposited by pyrolytic decomposition of manganese, additional re-anodizing and deposition of transit coats are conducted. Specified sequence of operations and technological modes make it possible to increase capacitance of oxide-semiconductor capacitor. EFFECT: increased capacitance of oxide-semiconductor capacitors. 2 dwg
Title | Year | Author | Number |
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METHOD FOR MANUFACTURING OF OXIDE-SEMICONDUCTOR CAPACITOR | 1993 |
|
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METHOD OF MAKING CAPACITOR CATHODE PLATE AND SOLID-ELECTROLYTE CAPACITOR | 2011 |
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RU2463679C1 |
METHOD FOR PRODUCING ORGANIC SEMICONDUCTOR CATHODE COATING IN OXIDE SOLID-ELECTROLYTE CAPACITORS | 1992 |
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Authors
Dates
1996-06-10—Published
1992-09-04—Filed