METHOD FOR MANUFACTURING OF OXIDE-SEMICONDUCTOR CAPACITOR Russian patent published in 1997 - IPC

Abstract RU 2076368 C1

FIELD: electronic devices. SUBSTANCE: method involves oxidizing of anode which is made from gate metal, deposition of semiconductor cathode on it by means of heat decomposition of magnesium nitrate with addition of glycerin of 0.2- 0.7 weight percents. EFFECT: increased number of materials which lower leakage currents and increase effective voltage, increased good-to-bad ratio. 1 dwg, 3 tbl

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RU 2 076 368 C1

Authors

Bezdvornykh T.V.

Ershova N.Ju.

Kosjuk L.M.

Chupakhina E.A.

Jakovleva N.M.

Dates

1997-03-27Published

1993-01-14Filed