REDUNDANT MEMORY GATE Russian patent published in 1997 - IPC

FIELD: automation and computer engineering, devices for reliable information storage. SUBSTANCE: device provides no possibility for self-induced switching of flip-flops when gate is exposed to ionizing radiation. When setting inputs and reset inputs receive "1" signals, which are caused by electromagnetic pulse, flip-flop is not switched because second inputs of fifth and sixth AND gates 22 and 23 receive low-level signal from outputs of NAND gate 24. This prohibits further transfer of error signal. EFFECT: increased stability to electromagnetic pulses. 2 cl, 1 dwg