METHOD OF PRODUCING SILICON Russian patent published in 1997 - IPC

FIELD: silicon production. SUBSTANCE: in order to eliminate caking of blend and ensuring its smooth spontaneous descent into the furnace hearth and also to increase productivity of furnace and reduce power consumption, a part of reaction gas during the smelting process is removed from furnace through electrode hollows, in particular, 266-400 cu.m/t of gas on conversion to carbon oxide content and taking into account IT value of poured silicon fusion. Released gas, after cooling, is treated under no oxygen access to remove dust, and from the latter, after precipitation, silicon grains with reduced content of admixtures are separated. EFFECT: enhanced efficiency of process. 2 cl