FIELD: production of ceramic materials for high-frequency temperature-compensating capacitors. SUBSTANCE: the mixture includes CaTiO3, SrTiO3, MnCO3, Nb2O5, ZnO and H3BO3, and the method is based on production of mixture by mixing of source components, moulding of blanks from them and their burning; prior to mixing the mixture components, ZnO and H3BO3 are subjected to hydrothermal treatment by their mixing in aqueous medium at a temperature of 80 to 100 C with subsequent dewatering to the free-flowing state; after hydrothermal treatment they are mixed with the other components of the mixture, calcinated at 750 to 850 C, and mixed once again. EFFECT: reduced sintering temperature, enhanced electric strength and reduced labour content and power consumption. 2 cl, 2 tbl
Title | Year | Author | Number |
---|---|---|---|
CERAMIC MATERIAL USED FOR MANUFACTURE OF PREDOMINANTLY LOW-FREQUENCY CAPACITORS AND PROCESS FOR PRODUCING SAME | 1991 |
|
RU2023706C1 |
CERAMIC MATERIAL USED MAINLY FOR HIGH-FREQUENCY CAPACITORS AND METHOD OF ITS PRODUCTION | 1991 |
|
RU2079913C1 |
FERROCERAMIC MATERIAL CHARGE | 1992 |
|
RU2047584C1 |
MANUFACTURING TECHNIQUE FOR SEGMENTOCERAMIC MATERIALS OF CAPACITORS | 1991 |
|
RU2012085C1 |
CHARGE FOR MANUFACTURE OF HIGH-FREQUENCY HEAT-COMPENSATING CAPACITORS | 0 |
|
SU1825353A3 |
MIXTURE OF FERROELECTRIC CERAMIC MATERIAL FOR LOW FREQUENCY CONDENSERS | 1994 |
|
RU2096385C1 |
CERAMIC MATERIAL FOR HIGH-FREQUENCY CAPACITORS AND METHOD OF IT MANUFACTURING | 0 |
|
SU1752197A3 |
CHARGE COMPOSITION FOR PRODUCING SEGNETOCERAMIC CAPACITOR MATERIAL | 0 |
|
SU1474150A1 |
BLEND FOR THERMISTOR-DESTINED SEMICONDUCTOR CERAMIC MATERIAL AND A METHOD FOR PREPARING MATERIAL THEREFROM | 2002 |
|
RU2259335C2 |
SLIP COMPOSITION FOR CERAMIC FILM MAKING | 1991 |
|
RU2045496C1 |
Authors
Dates
1997-05-20—Published
1992-10-27—Filed