BLEND FOR THERMISTOR-DESTINED SEMICONDUCTOR CERAMIC MATERIAL AND A METHOD FOR PREPARING MATERIAL THEREFROM Russian patent published in 2005 - IPC

FIELD: electronic engineering.

SUBSTANCE: invention relates to manufacture of heating thermistors with positive resistance coefficient. Blend contains, wt %: CaTiO₃ 1.06-8,88; PbO 7.78-25.67, TiO₂ 2.43-9.03, SiO₂ 0.54-0.71, YCl₃·6H₂O 0.69-0.98, MnSO₄·5H₂O 10.07-0.13, and BaTiO₃ - the rest. Method comprises preliminary preparation of barium titanate via calcination of barium titanyl oxalate at 1130-1180°C, preliminary preparation of calcium titanate via calcination of calcium carbonate/titanium dioxide mixture at 1000-1080°C, preliminary mixing and dry grinding of barium and calcium titanates, lead oxide, titanium dioxide, and silicon dioxide on vibration or ball mill provided with zirconium dioxide-based milling bodies to achieve particle size below 1,2 μm, after which blend components are blended in ammonium carbonate or bicarbonate aqueous solution inside ball mill using polymeric milling bodies. Thus obtained blend is then dehydrated, dried, and molded to form blanks.

EFFECT: improved performance characteristics and reliability of thermistors and reduced power and material consumption on manufacture thereof.

2 cl, 1 tbl, 3 ex