SEMICONDUCTOR AMPLIFIER WITH TWO-POLE POWER SUPPLY Russian patent published in 1997 - IPC

Abstract RU 2079965 C1

FIELD: DC amplifiers. SUBSTANCE: semiconductor amplifier has transistors 2,3, input signal source 6, and series-connected voltage regulator diode and load resistor. Input signal source 6 is, essentially, current supply; first feedback resistor is inserted between base of transistor 2 and point of connection of voltage regulator diode and load resistor; emitter of transistor 3 is connected to first lead of newly introduced second feedback resistor and to gate of newly introduced field-effect transistor whose source is connected to second lead of feedback resistor and voltage regulator diode and its drain is connected to second power bus; gate of field-effect transistor and emitter of transistor 3 are made of semiconductor material of same structure. Drain of field-effect transistor is connected to second power bus through base-emitter gap of newly introduced to second power bus through base-emitter gap of newly introduced transistor 11 whose collector is connected to source of field-effect transistor. EFFECT: improved design. 2 cl, 1 dwg

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RU 2 079 965 C1

Authors

Shejn Leonid Iosifovich

Dates

1997-05-20Published

1992-05-18Filed