TRANSISTOR GATE Russian patent published in 1997 - IPC

FIELD: electric engineering. SUBSTANCE: device has field-effect transistor which has insulated gate, and which source and drain are device outputs. In addition device has control circuit which one resistor is inserted between source and gate of field-effect transistor. One pole of power supply of control circuit is connected to pole of opposite polarity of load power supply. Emitter of first bipolar transistor of control circuit and one electrode of diode which conductance is opposite to conductance of transistor are connected to gate of field-effect transistor. Emitter of second bipolar transistor, one electrode of stabilizing diode and one terminal of capacitor are connected to source of field-effect transistor. Second electrode of diode, collector of second bipolar transistor and base of first bipolar transistor are joined and connected to collector of first bipolar transistor through resistor. Second electrode of stabilizing diode is connected to collector of first bipolar transistor directly and to second pole of power supply of control circuit through third resistor. It is also connected to base of second bipolar transistor through fourth resistor. Photo-sensitive diode or transistor of optron is inserted between base of second bipolar transistor and emitter of this bipolar transistor. Electrodes of light-emitting diode of optron are designed for connection to source of control signal and serve as gate input. EFFECT: increased functional capabilities. 3 cl, 3 dwg