DIFFERENTIAL AMPLIFIER ON FIELD-EFFECT TRANSISTORS WITH CONTROL P-N JUNCTION Russian patent published in 2022 - IPC H03F3/45 

FIELD: analogue microelectronics.

SUBSTANCE: invention relates to analogue microelectronics and can be used in various analogue and analogue-to-digital interfaces — active RC filters, normalizing converters, etc., including those working in conditions of low temperatures and exposure to radiation. Technical result is achieved by creating conditions under which in the circuit of second (4) current output of the device, complete mutual compensation of static current of the dynamic load circuit on third (18) additional field-effect transistor and drain current of second (8) output field-effect transistor is ensured. This condition is met by special construction of current-stabilizing bipole (9) of the common source circuit of first (5) and second (6) input field-effect transistors, implemented on first (16) and second (17) additional field-effect transistors, as well as the same construction of the reference current source on fifth (25) additional field-effect transistor.

EFFECT: creation of radiation-resistant and low-temperature differential amplifier and operational amplifier based on it, which due to high self-adjusting symmetry of the static mode on drain currents and gate-drain voltages of the used field transistors provides a low level of the systematic component of zero offset voltage and increased values of the voltage gain.

4 cl, 5 dwg