SEMICONDUCTOR PRESSURE TRANSDUCER Russian patent published in 1997 - IPC

FIELD: measurement technology, primary pressure-to-electric signal converters. SUBSTANCE: semiconductor pressure transducer has piezobridge 10 formed on silicon restoring element and connected with its one diagonal to controlled power supply source 11 of piezobridge and with second diagonal - to differential amplifier 12 having input 13 of signal shift, thermobridge 14 which measurement diagonal is connected to operational amplifiers 17, 18 with resistors 23, 24 in feedback circuit. One end of diagonal of thermobridge is connected to inverse inputs of two operational amplifiers 17, 18 through resistors 21, 22 and second end of diagonal - to their direct inputs to increase accuracy and reduce labour input to adjustment of transducer. Output of operational amplifier 17 is connected to input 13 of signal shift of differential amplifier 12 of piezobridge and output of second operational amplifier 18 - to controlling input of power supply source 11 of piezobridge. EFFECT: increased accuracy and reduced labour input to adjustment of transducer. 8 dwg