SEMICONDUCTOR PRESSURE TRANSDUCER Russian patent published in 2001 - IPC

FIELD: measurement technology. SUBSTANCE: semiconductor pressure transducer is designed for use in primary pressure-to-electric signal converters. It has piezobridge formed on springy membrane of silicon sensitive element, arms of piezobridge being tied-up in common point connected to zero lead of power supply of transducer or to voltage wire of power supply transducer. Each arm has measurement output and power input, thermal corrector with two leads-out of reference voltages with different temperature gradients, differential amplifier of pressure signal. Controllable power supply source is built in each arm of piezobridge based on operational amplifier whose inverse input is connected to measurement output of arm of piezobridge, whose direct input is linked to one of leads-out of reference voltage of thermal corrector and whose output is connected to power input of arm of piezobridge and to one of inputs of differential amplifier of pressure signal. Thermal corrector of transducer includes operational amplifier with resistors and thermal bridge. One measurement lead-out of thermal bridge is connected via resistive divider to direct input of operational amplifier of transducer, its another lead-out is connected via resistor to inverse input of operational amplifier of thermal corrector. Resistive divider whose tap is first lead-out of thermal corrector is placed between inverse input and output of operational amplifier of thermal corrector for convenient adjustment. Lead-out of operational amplifier of thermal corrector is second lead-out of thermal corrector. EFFECT: simplified technical approach with preservation of independent multiplicative and additive components of error and enhanced linearity of output signal. 1 cl, 8 dwg