FIELD: measurement of temperature. SUBSTANCE: direct voltage with a polarity, making the p-n junction conducting, is applied to a semiconductor diode. The polarity of the voltage applied to the diode is reversed, and back current Iback through the p-n junction is measured. The polarity of the voltage applied to the diode is reversed once again, forward current Ibwd through the p-n junction is measured, and the applied voltage is decreased before the equality of Ifwd and Iback is attained. The value of temperature is determined according to the voltage drop across the conducting p-n junction. The device realizing the method uses LF generator 1, four semiconductor diodes (2 through 5) located on a common substrate, LF amplitude 7, synchronous detector 8, low-pass filter 9 and output voltmeter 10. EFFECT: enhanced sensitivity and accuracy of measurement. 2 cl, 1 dwg
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Authors
Dates
1997-09-10—Published
1992-11-10—Filed