METHOD OF TEMPERATURE MEASUREMENT AND DEVICE FOR ITS REALIZATION Russian patent published in 1997 - IPC

Abstract RU 2089863 C1

FIELD: measurement of temperature. SUBSTANCE: direct voltage with a polarity, making the p-n junction conducting, is applied to a semiconductor diode. The polarity of the voltage applied to the diode is reversed, and back current Iback through the p-n junction is measured. The polarity of the voltage applied to the diode is reversed once again, forward current Ibwd through the p-n junction is measured, and the applied voltage is decreased before the equality of Ifwd and Iback is attained. The value of temperature is determined according to the voltage drop across the conducting p-n junction. The device realizing the method uses LF generator 1, four semiconductor diodes (2 through 5) located on a common substrate, LF amplitude 7, synchronous detector 8, low-pass filter 9 and output voltmeter 10. EFFECT: enhanced sensitivity and accuracy of measurement. 2 cl, 1 dwg

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RU 2 089 863 C1

Authors

Skripnik Jurij Alekseevich[Ua]

Skripnik Igor' Jur'Evich[Ua]

Khimicheva Anna Ivanovna[Ua]

Sannikov Vladimir Jur'Evich[Ua]

Dates

1997-09-10Published

1992-11-10Filed