METHOD OF MEASURING NONUNIFORMITY OF TEMPERATURE FIELD Russian patent published in 1995 - IPC

FIELD: measurement technology. SUBSTANCE: reference semiconductor diode is placed into basis point of the field. Measuring semiconductor diodes are placed into the first and sequent control points. Preset value permanent current is passed through open p-n junctions of the diodes. Voltage drop at diode is transformed into alternating voltage. Alternating voltage frequency is measured then, and diode temperature is judged from this frequency. After frequency is measured, which corresponds to temperature of reference diode, preset current is passed in turn through the first and subsequent diodes. Variable voltage frequencies are measured at specific points of temperature field. Then current is increased which flows through p-n junction of the last diode. The second value of variable voltage frequency is measured, and the same current is passed in back order through open p-n junctions of measuring and reference diodes, measuring the second value of variable voltage frequency. Difference in temperatures of points under check and temperature of basis point and relative temperature differences are determined from the relations, given in the description of the invention. EFFECT: reduced error of temperature difference. 1 dwg