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2 100 835

(13)

(51)

IPC

(21) (22)

Application

94045238/04, 1994-12-26

(22)

Actual filing date

1994-12-26

(45)

Published

1997-12-27

(72)

Inventor

Vannikov A.V.Grishina A.D.Kol'Tsov Ju.I.Kudrjavtsev E.N.Tedoradze M.G.Khazova G.O.

(73)

Holder

Institut Ehlektrokhimii Im.A.N.Frumkina Ran

POSITIVE PHOTORESIST Russian patent published in 1997 - IPC

Abstract RU 2100835 C1

FIELD: photolithographic processes. SUBSTANCE: positive photoresist applicable in manufacture of integrated circuits in microelectronics and radioelectronics contains, wt. -%: cresol- formaldehyde novolak resin, 60.0-66.5; diester of 1,2- naphtoquinodiazide-(2),5-sulfonic acid and 2,4-dihydroxybenzophenone, 3.0-33.0; organic compound possessing electronodonor properties and selected from series: p-dimethylaminobenzaldehyde, p- diethylaminobenzaldehyde, p-phenylenediamine, nitrosodiethylaniline, o-phenylenediamine, ferrocene, 2.0-9.0; and organic solvent, the balance. EFFECT: increased sensitivity to near UV emission and contrast and resistance in acidic media.

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RU 2 100 835 C1

Authors

Vannikov A.V.

Grishina A.D.

Kol'Tsov Ju.I.

Kudrjavtsev E.N.

Tedoradze M.G.

Khazova G.O.

Dates

1997-12-27—Published

1994-12-26—Filed