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2 427 016

(13)

(51)

IPC

G03F7/22(2006-01-01)

G03C1/695(2006-01-01)

(21) (22)

Application

2010107569/05, 2010-03-03

(24)

Start date

2010-03-03

(22)

Actual filing date

2010-03-03

(45)

Published

2011-08-20

(72)

Inventor

Afanas'Ev Mikhail Mefod"EvichEhrlikh Roal'D DavidovichBeklemyshev Vjacheslav IvanovichMakhonin Igor' IvanovichFilippov Konstantin Vital'Evich

(73)

Holder

Zakrytoe Aktsionernoe Obshchestvo Prikladnoj Nanotekhnologii"

METHOD OF PRODUCING POSITIVE PHOTORESIST Russian patent published in 2011 - IPC G03F7/22 G03C1/695

Abstract RU 2427016 C1

FIELD: physics.

SUBSTANCE: disclosed is a method of producing positive photoresist via by reacting a film-forming agent in form of phenol formaldehyde resins and a light-sensitive element - product of reaction of 1,2-naphthoquinonediazide-(2)-4-sulphochloride with 3-(2-ethylhexyloxy)propylamine. The process is carried out in a mixture of organic solvents based on carboxylic esters and xylene in the presence of a non-ionic surfactant - fluoroaliphatic ether with density 1.1-1.17 g/cm³ and alpha-methylstyrene and/or p-aminophenol in weight ratio in mixture thereof equal to 1:1.

EFFECT: obtained positive photoresist has high light sensitivity and high resolution for exposing radiation.

5 cl, 3 ex

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RU 2 427 016 C1

Authors

Afanas'Ev Mikhail Mefod"Evich

Ehrlikh Roal'D Davidovich

Beklemyshev Vjacheslav Ivanovich

Makhonin Igor' Ivanovich

Filippov Konstantin Vital'Evich

Dates

2011-08-20—Published

2010-03-03—Filed