STORAGE REGISTER OF MEMORY UNIT Russian patent published in 1998 - IPC

FIELD: power- independent memory locations, microelectronics for design of ROM, PROM, and EPROM. SUBSTANCE: each zigzag-shaped metal line by-passes two diffusion lines which numbers are i and i-3 or i+3 depending on oven or odd number i. This results in possibility of individual selection of each memory location during writing and reading. Diffusion bit lines are separated into insulated pieces. Spaces between insulated pieces are located between contacts of metal lines to pieces of two adjacent diffusion lines. This design also results in possibility to increase tolerance range for size and mismatch of layers during generation of contact windows and metal layer. EFFECT: increased information capacity. 3 cl, 3 dwg