METHOD FOR MANUFACTURING OF MOS MEMORY REGISTER, MEMORY REGISTER AND MATRIX MEMORY UNIT WHICH USES THIS REGISTER Russian patent published in 1998 - IPC

FIELD: microelectronics, in particular, manufacturing of electronically programmable read- only memory units using MOS transistors. SUBSTANCE: memory register is designed as MOS transistor with side spacer gate. Dielectric material under side gate is SiO₂-Si₃N₄-SiO₂. Region of injection of hot vacancies into under-gate dielectric material covers region of trapping of negative information charge due to low spacer width. Said MOS memory unit is used in matrix memory unit which has possibility of individual selection in all operation modes and protection against alternation of logical state of non-selected registers when information is stored and cleared. EFFECT: increased information density, increased efficiency of clearing and increased reliability to repeated operations. 12 cl, 1 tbl, 11 dwg