FIELD: microelectronics, in particular, manufacturing of electronically programmable read- only memory units using MOS transistors. SUBSTANCE: memory register is designed as MOS transistor with side spacer gate. Dielectric material under side gate is SiO2-Si3N4-SiO2. Region of injection of hot vacancies into under-gate dielectric material covers region of trapping of negative information charge due to low spacer width. Said MOS memory unit is used in matrix memory unit which has possibility of individual selection in all operation modes and protection against alternation of logical state of non-selected registers when information is stored and cleared. EFFECT: increased information density, increased efficiency of clearing and increased reliability to repeated operations. 12 cl, 1 tbl, 11 dwg
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Authors
Dates
1998-02-20—Published
1996-01-17—Filed