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2 118 964

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C1

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IPC

(21) (22)

Application

92003409/04, 1992-11-02

(22)

Actual filing date

1992-11-02

(45)

Published

1998-09-20

(72)

Inventor

Tikhonovich T.V.Ivanov V.V.Bashkirova S.A.Chernyshev E.A.

(73)

Holder

Gosudarstvennyj Nauchno-Issledovatel'Skij Institut Khimii I Tekhnologii Ehlementoorganicheskikh Soedinenij

POLYORGANOSILANES AND BILAYER POSITIVE MASK FOR POLYORGANOSILANE-BASE PHOTOLITHOGRAPHY Russian patent published in 1998 - IPC

Abstract RU 2118964 C1

FIELD: organic chemistry. SUBSTANCE: invention proposes polyorganosilanes of the formula (I) where R1 is ethyladamantyl. ethyl(dimethyladamantyl); R2 is methyl, phenyl; R3 is methyl, phenyl, cyclohexyl; m = 2-3000; n = 2-3000; m : n = 1:(0.1-10) that can be used in microelectronics for making positive mask for photolithography. EFFECT: improved method of polyorganosilanes synthesis. 2 tbl, 1 dwg, 8 ex

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RU 2 118 964 C1

Authors

Tikhonovich T.V.

Ivanov V.V.

Bashkirova S.A.

Chernyshev E.A.

Dates

1998-09-20—Published

1992-11-02—Filed

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