METHOD AND DEVICE FOR ULTRASONIC LOCATION OF LEAK Russian patent published in 1999 - IPC

FIELD: measurement technology. SUBSTANCE: levels of sound caused by leak are measured to in various points along measurement section for ultrasonic location of it. Location of leak is found on band diagram of levels of sound. For circular structure band diagram is formed from band diagram of levels of sound on specified section and from second same band diagram attached to first one. Segment of diagram with band corresponding to maximum level of sound that corresponds to measurement section is isolated in middle. Device to process data has capability to form specified band diagram with isolation of segment on which location of leak is determined. Correction of value of level of sound to compensate for imposition of sound vibrations caused by leaks on sides opposite to it is also possible. EFFECT: increased accuracy of location of leaks. 5 cl, 4 dwg