CONTROL DEVICE FOR POWER TRANSISTOR SWITCH Russian patent published in 1999 - IPC

FIELD: converter engineering; power converters. SUBSTANCE: device that has first transistor switch whose base is connected to resistor input and also to diode anode, power transistor switch, and bias voltage supply terminals is provided, in addition, with second transistor switch, three leakage resistors, and loading resistor. Power transistor switch is built up of group of parallel-connected high-power transistors and two groups of equalizing resistors. All bases of high- power transistors are connected to respective terminals, collectors are connected to external-load terminal and emitters, to common bus through first group of equalizing resistors and to emitter of first transistor switch through second group of equalizing resistors. Emitter of first transistor switch is connected through loading resistor to common bus and also, through first leakage resistor, to base; its collector is connected to base of second transistor switch. Emitter of second transistor switch is connected to terminal for positive voltage supply lead and also, through second leakage resistor, to base; collector is connected to terminal for base leads of power transistor switch and, through third leakage resistor, to common bus; negative lead of bias voltage supply and diode cathode are connected to external-load terminal. EFFECT: increased output power while maintaining same output voltage characteristics. 1 dwg