METHOD AND DEVICE FOR TURNING-ON PLASMA- COUPLED THYRISTOR Russian patent published in 2000 - IPC

Abstract RU 2144716 C1

FIELD: thyristors. SUBSTANCE: setting voltage applied between anode and cathode of gas-filled device is chosen to be lower than self-maintained arc discharge firing voltage. Working gas is heated in Aston glow region of glow-discharge pubic layer at negative electrode. Gate electrode is arranged within gas-filled device at cathode so that it is spaced through several lengths of working gas ion recharge, its circuit being electrically isolated from anode-cathode circuit. EFFECT: improved design. 5 cl, 4 dwg

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RU 2 144 716 C1

Authors

Onufriev V.V.

Dates

2000-01-20Published

1993-10-27Filed