FIELD: instrument making.
SUBSTANCE: invention may be used in development of semiconductor pressure sensors made according to MEMS technology (microelectromechanical systems). The pressure converter comprises a silicon membrane with a strain metering bridge connected in series with a transistor connected to a source of DC voltage. The output diagonal of the strain bridge is connected to the inlet of the instrumental amplifier, the output of which is connected to the first input of temperature error correction amplifier. A summator is connected to the second input of the correction amplifier, the first two inputs in it are connected via the resistor and the diode with the middle points of the measurement strain bridge. The third input via the resistor is connected to the source of summator voltage shift.
EFFECT: elimination of temperature error in a converter.
1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| BRIDGE-TYPE PRESSURE TRANSDUCER | 2019 |
|
RU2731033C1 |
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| CONVERTER OF PRESSURE TO ELECTRIC SIGNAL | 1995 |
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| SEMICONDUCTOR PRESSURE TRANSDUCER | 1999 |
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| STRAIN-GAUGE TRANSDUCER | 2003 |
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| STRAIN-MEASURING DEVICE | 0 |
|
SU1758414A1 |
