SEMICONDUCTOR MEMORY UNIT Russian patent published in 2002 - IPC

Abstract RU 2182376 C2

FIELD: computer engineering. SUBSTANCE: device has a set of memory cells, selection circuit, control circuit, excitation circuit. EFFECT: low power consumption; low intensity of transverse currents; clear voltage levels. 20 cl, 11 dwg

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RU 2 182 376 C2

Authors

Tsettler Tomas

Dates

2002-05-10—Published

1997-03-20—Filed