PROGRAMMABLE READ-ONLY MEMORY WITH IMPROVED FETCH TIME Russian patent published in 2001 - IPC

Abstract RU 2162254 C2

FIELD: electrically erasable read-only memories. SUBSTANCE: device has memory transistor, choice transistor, bit bus, word bus, facility (FSU) meant to shape readout voltage depending on clock-signal frequency. Electrically erasable read-only memory enables unambiguous reading of data at any fetch time. EFFECT: enhanced erasing speed. 4 cl, 4 dwg

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RU 2 162 254 C2

Authors

Sedlak Khol'Ger

Dates

2001-01-20—Published

1997-04-16—Filed