MULTISTAGE TRANSISTOR AMPLIFIER Russian patent published in 2002 - IPC

Abstract RU 2183380 C2

FIELD: electronics. SUBSTANCE: multistage transistor amplifier can be used to design amplifiers based on transistors which do not distort amplified signal. It has stages built on p-n-p and n-p-n transistors connected with emitters through resistor R. Resistive loads are connected to collectors of transistors which bases form common controlling electrode coupled to power supply source via one common element of feedback of stages. Bases of other transistors of each next stage starting with second transistor are connected to load of previous stage. Collector loads of stages are comprised of 2N semiconductor diodes connected in series and of resistor of NR value, where N is integral number. EFFECT: improved compensation for nonlinear distortions. 12 dwg

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RU 2 183 380 C2

Authors

Prishchepov G.F.

Prishchepova T.M.

Dates

2002-06-10Published

2000-05-26Filed