STATIC-INDUCTION INTEGRATED FIELD-EFFECT SCHOTTKY- BARRIER TRANSISTOR Russian patent published in 2002 - IPC

FIELD: computer engineering; integrated- circuit electronics; very large-scale integrated-circuit structures of field- effect transistors. SUBSTANCE: transistor that has semiconductor drain region of first polarity of conductivity, semiconductor source region of second polarity of conductivity, drain metal contact located under semiconductor drain region and connected to the latter, source metal contact located under semiconductor source region and connected to the latter, vertically positioned semiconductor channel region of second polarity of conductivity, and two metal gates is provided with newly introduced four dielectric-isolator regions of which first isolator region is disposed between semiconductor drain region and first metal Schottky- barrier gate, second region, between semiconductor drain region and second metal Schottky-barrier gate, third region, between first metal Schottky-barrier gate and semiconductor source region, and fourth one, between second metal Schottky-barrier gate and semiconductor source region; semiconductor channel region of second polarity of conductivity is of isosceles-trapezium cross-section whose large base is adjacent to semiconductor drain region of second polarity of conductivity and its small base, to semiconductor source region of second polarity of conductivity; trapezoidal-section metal gates are arranged to the left and to the right of semiconductor channel region of second polarity of conductivity and both form through their sides Schottky-barrier junctions; height of semiconductor channel region of second polarity of conductivity defining length of transistor channel equals height of metal Schottky-barrier gate. All these novelties impart pentode characteristic to transistor. EFFECT: reduced space requirement, enhanced speed and thermal stability, enlarged operating temperature range. 4 dwg