DEVICE FOR STABILIZATION OF TRANSISTOR MODE Russian patent published in 1998 - IPC

FIELD: radio engineering, in particular, transistor power amplifiers. SUBSTANCE: device has transistor 1, temperature detection transistor 2, which collector is connected to base of transistor 1 and emitter is connected to common line, resistor 3, which is inserted between power supply line and collector of transistor 2, transistor 4 which is connected as diode, its emitter is connected to power supply line and collector and base are connected to each other. In addition device has resistor 5 which is inserted between collectors of transistor 1 and 4, transistor 6 which base is connected to collector of transistor 1, resistor 7 which is inserted between power supply line and emitter of transistor 6, resistor 8 and variable resistor 9 which are connected in series and inserted between common line and emitter of transistor 1. In addition device has resistor 10 which is inserted between base of transistor 2 and connection point of resistor 8 and 9, at least one adjusting circuit 11, which has input potentiometer 12, which one terminal serves as input of adjusting circuit 11 and another terminal is connected to common line. In addition device has correction circuit 13, which may be designed as integrating RC circuit with resistor 14, which is inserted between input and output of correction circuit 13, and capacitor 15, which is connected in parallel to input of correction circuit 13. Input of correction circuit is connected to middle terminal of input potentiometer 12. In addition device has resistor 16, which is inserted between output of correction circuit 13 and output of adjusting circuit 11. Inputs of adjusting circuit 11 are connected to collector of transistor 6, its outputs are connected to each other. In addition device has splitting capacitor 17 which is inserted between base of transistor 2 and connection point of terminals of adjusting circuit 11. Output of stabilization unit is emitter of transistor 1. EFFECT: decreased non-linear inertial distortions, which appear in course of amplification of amplitude-modulated oscillations and are caused by inertial thermal processes in transistors. 4 dwg