REVERSING DYNAMIC LOGIC DEVICE BUILT AROUND INSULATED-GATE FIELD-EFFECT TRANSISTORS Russian patent published in 2002 - IPC

FIELD: electronic devices. SUBSTANCE: logic device designed so that part of energy used for executing logic operations is returned to power supply has newly introduced auxiliary clock buses and its core gates are provided with additional isolating transistors which make it possible to use n-channel filed-effect transistors only and to increase cut-off voltage margin of logic transistors in core gates. EFFECT: enhanced speed and noise immunity, facilitated manufacture in integrated-circuit configuration, improved compactness, reduced cost. 17 dwg