MAGNETIC-FIELD VECTOR SENSOR Russian patent published in 1998 - IPC

FIELD: magnetic- field sensing semiconductor devices such as digital sensors or sensing elements of magnetic- field controlled integrated circuits. SUBSTANCE: sensor is, essentially, structure of two bipolar n-p-n magnetic transistors integrated into four-collector bipolar magnetic transistor and double-drain MOS magnetic transistor. Electrode of MOS magnetic transistor gate is provided with ports giving access to contact regions of MOS transistor current contacts, collector and emitter regions, and region of contact for base of four-collector bipolar magnetic transistor, their sizes being not less than those of ports; side insulation over perimeter of ports in gate electrode has its edges aligned with those of respective contact ports; low-resistance region of second polarity of conductivity is made between external edge of MOS transistor gate electrode and closest edge of insulation section, its width being not less than distance between these edges. Sensor body depends only on configuration of gate electrode irrespective of precision of process equipment and accuracy of relative alignment of configuration layers. EFFECT: reduced output signal at zero magnetic field. 1 dwg