FIELD: electron-ion technology of treatment of materials. SUBSTANCE: invention specifically refers to gaseous-discharge facilities for ion cleaning and etching of materials. It can find use in manufacture of element base from multicomponent materials in microelectronics. Device for ion treatment of materials has plasma generator, extracting electrode with substrate put on it, means for evacuation and leak-in of gas, gas chamber with flight holes located between plasma generator and extracting electrode. Diameter of flight holes is less than flight dimension of chamber. Plasma generator is inserted with collector that carries material of substrate. EFFECT: increased productivity of treatment. 1 cl, 1 dwg
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SU1281141A2 |
Authors
Dates
2002-08-10—Published
2000-12-18—Filed