DEVICE FOR ION TREATMENT OF MATERIALS Russian patent published in 2002 - IPC

Abstract RU 2187168 C1

FIELD: electron-ion technology of treatment of materials. SUBSTANCE: invention specifically refers to gaseous-discharge facilities for ion cleaning and etching of materials. It can find use in manufacture of element base from multicomponent materials in microelectronics. Device for ion treatment of materials has plasma generator, extracting electrode with substrate put on it, means for evacuation and leak-in of gas, gas chamber with flight holes located between plasma generator and extracting electrode. Diameter of flight holes is less than flight dimension of chamber. Plasma generator is inserted with collector that carries material of substrate. EFFECT: increased productivity of treatment. 1 cl, 1 dwg

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RU 2 187 168 C1

Authors

Orlikov L.N.

Orlikov N.L.

Shandarov S.M.

Dates

2002-08-10Published

2000-12-18Filed