FIELD: electrical engineering, applicable for protection of high-voltage transducers of various designations, in particular, for protection of rectifiers and inverters slave driven by the supply line. SUBSTANCE: the semiconductor devices in the unit are built around thyristors or diodes, the protective RC circuits are interconnected to series networks by one or two. The network by one is connected to the first semiconductor device counting from the anode of the high-voltage unit with one end via one of the secondary windings of the monitoring device transformer, and with the other end-directly. The networks by two are connected to the respective semiconductor devices with their ends directly, and with the points of their interconnections - via one of the secondary windings of the monitoring device transformer. The quantity of the semiconductor devices is odd. As a result, the sensitivity of the monitoring device increases by 25 and 16%, the current decreases. EFFECT: enhanced efficiency and economy. 1 dwg
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Authors
Dates
2002-10-20—Published
2001-05-03—Filed