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2 211 492

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IPC

(21) (22)

Application

2001111743/09, 2001-04-28

(24)

Start date

2001-04-28

(22)

Actual filing date

2001-04-28

(45)

Published

2003-08-27

(72)

Inventor

Pavlov A.A.Romanenko Ju.A.Pavlov A.A.Shandrikov A.V.Panfilov I.V.

(73)

Holder

Serpukhovskij Voennyj Institut Raketnykh VojskInstitut Inzhenernoj Fiziki Rossijskoj Federatsii

FAULT-TOLERANT RANDOM-ACCESS MEMORY Russian patent published in 2003 - IPC

Abstract RU 2211492 C2

FIELD: automation and computer engineering. SUBSTANCE: device has two coding units, syndrome computing unit, corrector, ten OR gates, AND gate unit, RS flip-flop, register, four EXCLUSIVE OR gates, two decoders, NOT gate, correction storage unit, correction flag computing unit, source and redundancy computing channels. EFFECT: enlarged functional capabilities. 1 cl, 2 dwg

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RU 2 211 492 C2

Authors

Pavlov A.A.

Romanenko Ju.A.

Pavlov A.A.

Shandrikov A.V.

Panfilov I.V.

Dates

2003-08-27—Published

2001-04-28—Filed