FIELD: laser technology, optical limiters of laser radiation. SUBSTANCE: there is developed device that limits intensity of laser radiation and is based on nonlinear effects in semiconductor element. Nonlinear optical element is fabricated from semiconductor with deep impurity levels or with deep levels of defects in prohibited zone with energy gap between these levels and bottom of conductance zone below energy of photon. Concentration of impurity or defects lies in limits 1015•1018cm-3. EFFECT: widened range of working parameters of limiter, reduced energy threshold of radiation, in particular. 3 dwg
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Authors
Dates
2003-11-20—Published
2001-10-01—Filed