PRODUCTION OF ULTRAFAST VACUUM TUNNEL PHOTODIODE WITH NANOSTRUCTURED EMITTER Russian patent published in 2015 - IPC H01L31/08 B82B1/00 B82Y40/00 

Abstract RU 2546053 C1

FIELD: electrical engineering.

SUBSTANCE: this process comprises measurement photocurrent of vacuum photodiode produced by irradiation with continuous or pulse optical radiation of emitter at definite accelerating voltage at anode. Note here that nanostructure emitter planar surface is irradiated by laser beam with wavelength selected from UV-, visible or IR-band at photon energy smaller than emitter electron work function. Fixed voltage U at anode is set that not exceeds that defined from claimed relationship.

EFFECT: possibility to detect optical radiation of micro and milliwatt power.

6 dwg

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RU 2 546 053 C1

Authors

Akchurin Garif Gazizovich

Yakunin Aleksandr Nikolaevich

Abanshin Nikolaj Pavlovich

Akchurin Georgij Garifovich

Dates

2015-04-10Published

2013-09-13Filed