TRANSISTOR SWITCH Russian patent published in 2004 - IPC

Abstract RU 2233022 C1

FIELD: pulse engineering.

SUBSTANCE: proposed transistor switch that can be used for program-controlled connection of supply voltage to bipolar read-mostly memories and also for functioning as current pulse shaper for distributed-variables cable or overhead communication line has one-structure transistors 1, 2, 29, other-structure transistors 19, 20, logic control gates 16 - 18, 21 - 23, 25, 30, 32, transistors 2 - 15, differentiating and integrating components 27 and 31, respectively, delay circuit 24, and RS flip-flop 28. Device provides for on-line monitoring of transistor switch load and for fast recovery of its serviceability upon eliminating accident in load (upon disconnection of opposing emergency voltage).

EFFECT: enhanced response due to reduced post-accident recovery time.

1 cl, 1 dwg

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RU 2 233 022 C1

Authors

Kukharev A.D.

Grishin Ju.K.

Dates

2004-07-20Published

2002-11-12Filed