TRANSISTOR SWITCH Russian patent published in 2006 - IPC H03K17/08 

FIELD: pulse engineering.

SUBSTANCE: proposed transistor switch that can be used for program-controlled connection of supply voltage to bipolar semipermanent memory devices and also for operation as generator of current pulses supplied to distributed-parameter cable or overhead communication line has different-structure transistors 1, 3 connected into push-pull circuit, AND gate 13, NAND gate 12, inverter 14 controlling these transistors 1, 3, and also transistor 2, resistors 5 through 10, and capacitor 11. Newly introduced in transistor switch are Schmitt flip-flop, diodes 22, 24, and voltage regulator diode 20. These newly introduced components enable on-line monitoring of load conditions and automatic variation of state of switch components.

EFFECT: reduced power requirement, enhanced reliability.

1 cl, 1 dwg