FIELD: electrical engineering; peak overvoltage protective methods and devices.
SUBSTANCE: proposed method and device are used to protect switching circuit 11 built around field-effect transistors against peak overvoltages. Novelty is that protective switching circuit 12 is connected in parallel with switching circuit 11 built around field-effect transistors so as to detect peak overvoltages; voltage UF applied to switching circuit 11 built around filed-effect transistors is checked in particular when this circuit does not pass current and when voltage UF applied to switching circuit 11 built around field-effect transistors suddenly rises beyond desired threshold voltage so that it is considered as peak overvoltage; protective switching circuit 12 is driven in conduction and in the process peak overvoltage is forced to pass through this protective circuit.
EFFECT: enhanced reliability of protection against peak overvoltages.
3 cl, 7 dwg
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Authors
Dates
2004-08-27—Published
1999-07-30—Filed