PEAK OVERVOLTAGE PROTECTIVE DEVICE AND METHOD Russian patent published in 2004 - IPC

FIELD: electrical engineering; peak overvoltage protective methods and devices.

SUBSTANCE: proposed method and device are used to protect switching circuit 11 built around field-effect transistors against peak overvoltages. Novelty is that protective switching circuit 12 is connected in parallel with switching circuit 11 built around field-effect transistors so as to detect peak overvoltages; voltage U_F applied to switching circuit 11 built around filed-effect transistors is checked in particular when this circuit does not pass current and when voltage U_F applied to switching circuit 11 built around field-effect transistors suddenly rises beyond desired threshold voltage so that it is considered as peak overvoltage; protective switching circuit 12 is driven in conduction and in the process peak overvoltage is forced to pass through this protective circuit.

EFFECT: enhanced reliability of protection against peak overvoltages.

3 cl, 7 dwg