METHOD AND CIRCUIT FOR PROTECTION AGAINST VOLTAGE SURGES CAUSED BY TRANSIENTS Russian patent published in 2003 - IPC

FIELD: electrical and electronic engineering. SUBSTANCE: method used for protecting switches built around field-effect transistors against voltage surges caused by transients includes following procedures. Voltage across field-effect transistor 1 is checked up by means of voltage check device 3, for instance, in case voltage across device built around field-effect transistor 1 is cut off and in case voltage across device built around field-effect transistor 1 exceeds desired threshold value. Device built around field-effect transistor 1 is driven in conduction by means of voltage dropping device 4 and voltage surge energy in the form of current carried by field-effect transistor is extinguished across device built around field-effect transistor 1. EFFECT: enhanced reliability of surge protection for field-effect transistors. 7 cl, 5 dwg